^eini-donduatoi ^products., una. 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 plastic darlington complementary silicon power transistors ... designed for general-purpose amplifier and low-speed switching applications. ? high dc current gain ? hfe = 2000 (typ) @ ic = 2.0 adc ? monolithic construction with built-in base-emitter resistors to limit leakage multiplication ? choice of packages ? mje700 and mje800 series t0220ab, mje700t and mje800t maximum ratings rating collector-emitter voltage collector-base voltage emitter-base voltage collector current base current total power dissipation @ tc = 25c derate above 25c operating and storage junction temperature range symbol vceo vcb veb ig ib pd tj, tstg mje700.t mje800j 60 60 mje702 mje703 MJE802 mje803 80 80 5.0 4.0 0.1 case 77 40 0.32 to-220 50 0.40 -55to+150 unit vdc vdc vdc adc adc watts w/c c thermal characteristics characteristic thermal resistance, junction to case case 77 to-220 symbol rejc max 3.13 2.50 unit c/w 50 40 g 30 a cc 20 10 to-220ab- to-126 25 50 75 100 125 tc, case temperature (c) figure 1. power derating 150 pnp mje700,t mje702 mje703 npn mje800,t MJE802 mje803 4.0 ampere darlington power transistors complementary silicon 40 watt 50 watt to-225aa type mje700-703 mje800-803 case 221a-06 to-220ab mje700t mje800t quality semi-conductors
mje700.t mje702 mje703 mje80o.t MJE802 mje803 electrical characteristics (tc = 25c unless otherwise noted) characteristic symbol | min max unit off characteristics collector-emitter breakdown voltage (1 ) mje700.t, mje800.t oc = 50 madc, ib = 0) mje702, mje703, MJE802, mje803 collector cutoff current (vce = 60 vdc, ib = o) mjetooj, mjesoo.t (vce = so vdc, ib = o) mje/oa, mjetos, MJE802, mjesos collector cutoff current (vcb = rated bvceq. !e = ) (vcb = rated bvceo, ie = 0, tc = 100c) emitter cutoff current (vbe = 5.0 vdc, ic = 0) v(br)ceo !ceo icbo iebo 60 80 ? ? ? ? 100 100 100 500 2.0 vdc uadc uadc madc on characteristics dc current gain (1) (lc = 1 .5 adc, vce = 3-0 vdc) mje700.t, mje702, mje800.t, MJE802 (ic = 2.0 adc, vce = 3.0 vdc) mje703, mje803 (ic = 4.0 adc, vce = 3.0 vdc) all devices collector-emitter saturation voltage (1) (ic = 1 .5 adc, ib = 30 madc) mje700.t, mje702, mje800.t, MJE802 (ic = 2.0 adc, ib = 40 madc) mje703, mje803 (ic = 4.0 adc, ib = 40 madc) all devices base-emitter on voltage (1) (ic = 1 .5 adc, vce = 3.0 vdc) mje700j, mje702, mje800,t, MJE802 (ic = 2.0 adc, vce = 3.0 vdc) mje703, mje803 (ic = 4.0 adc, vce = 3- vdc) an devices hfe vce(sat) vbe(on) 750 750 100 ? ? ? 2.5 2.8 3.0 2.5 2.5 3.0 vdc vdc dynamic characteristics small-signal current gain (lc = 1.5 adc, vce = 3- vdc'f - 1- mhz) hfe 1.0 (1) pulse test: pulse width < 300 us, duty cycle < 2.0%.
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